silicon carbide

Silicon Carbide Products

650V to 1200V Ratings

200°C Operation

High speed switching with low Capacitance

High blocking voltage with low RDS(on)

Hermetic Packages

Compound semiconductors such as silicon carbide (SiC) are quickly emerging as the ideal successors to silicon in order to meet the need for higher efficiencies and power handling capability demanded in today’s power applications. Representing the next generation of high bandgap semiconductor technology these power devices far exceed the performance of their silicon counterparts with higher breakdown voltage, faster switching speeds and lower resistivity. Higher switching frequencies allow reduction in the size of components like inductors, capacitors, filters & transformers. Operating at temperatures in excess of 200°C make Solitron’s SiC solutions ideal for space constrained harsh environment applications.


 

MOSFETs

Solitron’s SiC MOSFETs are packaged to survive the most extreme environments. They feature very low RDS(on) even at high temperatures and excellent switching performance versus the best-in-class silicon technologies, with minimal variation versus temperature. Hermetic TO-258 packages with 200°C operation make these 650V and 1200V MOSFETs ideal for power supplies, motor controls and applications requiring the smallest size, lightest weight and highest efficiency levels. Customized configurations and packaging is available upon request.

N-Channel

Type NumberVoltageDrain CurrentRds (On)PackageIsolated CaseTemp. RangeDatasheet
SD11702650V50A7mΩTO-258 3L hermeticYes-55°C to 175°C SD11702
SD11704900V32A35mΩTO-258 5L hermeticYes-55°C to 150°C SD11704
SD117051200V50A32mΩTO-258 3L hermeticYes-55°C to 175°C SD11705
SD117071200V50A16mΩTO-258 3L hermeticYes-55°C to 175°C SD11707
SD11710700V140A15mΩTO-258 3L hermeticYes-55°C to 175°C SD11710
SD117141200V17A160mΩTO-257 3L hermeticYes-55°C to 175°C SD11714
SD117201200V58A50mΩTO-247 3L plasticNo-55°C to 175°C SD11720
SD117211200V58A50mΩTO-247 4L plasticNo-55°C to 175°C SD11721
SD117401200V100A8.6mΩSOT 227BNo-55°C to 175°C SD11740

Schottky Barrier Diodes

Solitron’s SiC Schottky barrier diodes range from 650V to1200V and include singles, duals and bridge configurations. Available in a wide variety of packages including hermetic they offer designers high efficiency and the ultimate in robust technology. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance. Customized configurations and packaging is available upon request.
Type NumberReverse VoltageForward CurrentDual/SinglePackageIsolated CaseTemp. RangeDatasheet
SD118001200V10ASingleTO-247 2LYes-40°C to 175°C SD11800
SD118011200V10ASingleTO-247 2LNo-40°C to 175°C SD11801
SD118031200V10ASingleTO-258 3LYes-55°C to 210°C SD11803
SD118041200V10A/20ADualTO-258 3LYes-55°C to 210°C SD11804
SD118051200V20ASingleTO-258 3LYes-55°C to 175°C SD11805
SD118061200V20A/40ADualTO-258 3LYes-55°C to 175°C SD11806
SD118081700V10ASingleTO-258 3LYes-55°C to 210°C SD11808
SD118091700V25ASingleTO-258 3LYes-55°C to 210°C SD11809
SD11810650V88ASingleTO-258 3LYes-55°C to 175°C SD11810
SD118111200V20ADualTO-258 3LYes-55°C to 175°C SD11811
SD118121200V20ADualTO-258 3LYes-55°C to 175°C SD11812
SDD10120AD1200V10A/20ADualTO-247 3LNo-40°C to 175°C SDD10120AD
SDD50065SHD1300V50ADualTO-247-2LYes-40°C to 175°C SDD50065SHD