SD11710 – 700V SiC N-Channel Power MOSFET

KEY FEATURES

I_D = 50A
R_DS(ON) = 15mΩ
Isolated Backside
TO-258 Hermetically Sealed Package
MIL-PRF-19500 Screening Available
Low Capacitance and Low Gate Charge
Fast Switching Speed due to Low Iinternal Gate Resistance (ESR)
Stable Operation at High Junction Temperature, T_J(MAX) = 175°C
Fast and Reliable Body Diode
Superior Avalanche Ruggedness
RoHS Compliant

Maximum Ratings, T_C = 25°C

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_DS	Drain-Source Voltage	700	V
V_GS	Gate-Source Voltage (dynamic)	23 to -10	V
I_D	Continuous Drain Current	140 @ TC = 25°C 99 @ TC = 100°C	A
I_D,pulse	Pulsed Drain Current	350	A
P_D	Maximum Power Dissipation	455	W
	Linear Derating Factor	3.03	W / °C

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