Silicon Carbide MOSFETs

silicon carbide mosfets

Very Low RDS(on)

650V and 1200V

Fully Hermetic Ri-Rel TO-258 Package with Isolated Back Side

■ Low Cost TO-247 Package

■  Ideal for High Voltage Power Supplies, EV and Motor Controls

Solitron’s Silicon Carbide (SiC) MOSFETs feature very low RDS(on) even at high temperatures and excellent switching performance versus the best-in-class silicon technologies, with minimal variation versus temperature. Silicon Carbide offers higher efficiency levels than silicon due to significantly lower energy loss and reverse charge. This results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.

Low-cost commercial TO-247 to fully hermetic TO-258 packages with 200°C operation make these 650V TO 1200V SiC MOSFETs ideal for a wide variety of applications manufactured to survive the most extreme environments. Renewable energy, EV/EV charging, motor drives, induction heating, and high voltage inverters/power supplies are numerous applications where silicon carbide technology provides advantageous size, weight and efficiency.

COTS, TX, TXV and S level screening is available.  Customized configurations and packaging including power modules are available upon request.

Type NumberVoltageDrain CurrentRds (On)PackageIsolated CaseTemp. RangeDatasheet
SD11702650V50A7mΩTO-258 3L hermeticYes-55°C to 175°C SD11702
SD11704900V32A35mΩTO-258 5L hermeticYes-55°C to 150°C SD11704
SD117051200V50A32mΩTO-258 3L hermeticYes-55°C to 175°C SD11705
SD117071200V50A16mΩTO-258 3L hermeticYes-55°C to 175°C SD11707
SD11710700V140A15mΩTO-258 3L hermeticYes-55°C to 175°C SD11710
SD117141200V17A160mΩTO-257 3L hermeticYes-55°C to 175°C SD11714
SD117201200V58A50mΩTO-247 3L plasticNo-55°C to 175°C SD11720
SD117211200V58A50mΩTO-247 4L plasticNo-55°C to 175°C SD11721
SD117401200V100A8.6mΩSOT 227BNo-55°C to 175°C SD11740