Silicon Carbide Diodes

silicon carbide diodes

650V to 1200V Ratings

200°C Operation

High speed switching with low Capacitance

High blocking voltage with low RDS(on)

Hermetic Packages

 

Solitron’s SiC Schottky barrier diodes range from 650V to 1200V and include singles, duals and bridge configurations. Available in a wide variety of packages including hermetic they offer designers high efficiency and the ultimate in robust technology. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance. Customized configurations and packaging is available upon request.

 

Type Number
 
Reverse
Voltage
Forward
Current
Dual/Single
 
Package
 
Isolated
Backside
Temp. Range
 
Datasheet
 
SD11800120010ASingleTO-247 2LYes-40°C to 175°C
SD11801120010ASingleTO-247 2LNo-40°C to 175°C
SDD10120AD120010A/20ADualTO-247 3LNo-40°C to 175°C
SDD50065SHD130050ADualTO-247-2LYes-40°C to 175°C
SDA001120010ASingleTO-258 hermeticYes-55°C to 175°CComing soon
SDA002120010A/20ADualTO-258 hermeticYes-55°C to 175°CComing soon
SDA003130050ADualTO-258 hermeticYes-55°C to 175°CComing soon