SDD50065SHD – 1300V Silicon Carbide Dual Schottky Diode

KEY FEATURES

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_R	DC Reverse Voltage	1300	V
V_RRM	Repetitive Peak Voltage	1300	V
V_RSM	Surge Peak Reverse Voltage	1300	V
V_DC	DC Blocking Voltage	1300	V
V_ISO	Isolation Voltage	1500	V
I_F(avg)	DC Forward Current	50	A
I_FRM	Repetitive Peak Forward Current	46	A
I_FSM	Non-Repetative Forward Surge Current	90	A
P_D	Power Dissipation	150	W
T_C(max)	Maximum Case Temperature	125	°C
T_J(max)	Maximum Junction Temperature	175	°C
T, T_STG	Operating and Storage Temperature	-55 to +175	°C