SD11810 – 650V Silicon Carbide Schottky Diode

KEY FEATURES

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_R	DC Reverse Voltage	650	V
V_RRM	Repetitive Peak Voltage	650	V
V_RSM	Surge Peak Reverse Voltage	650	V
V_DC	DC Blocking Voltage	650	V
I_F(avg)	DC Forward Current	88	A
I_FRM	Repetitive Peak Forward Current	128	A
I_FSM	Non-Repetative Forward Surge Current	260	A
P_D	Power Dissipation	283	W
T_J(max)	Maximum Junction Temperature	175	°C
T, T_STG	Operating and Storage Temperature	-55 to +175	°C