SD11811 – 1200V Silicon Carbide Dual Schottky Diode

 

KEY FEATURES

  • No Reverse Recovery / No Forward Recovery
  • Near  Zero Switch Loss
  • Switching Behavior Independent of Temperature
  • 200°C Operating Temperature
  • Isolated Case
  • Hermetic Package
  • TX, TXV and Space Level Screening Available

Maximum Ratings, TC = 25°C

SYMBOLCHARACTERISTICVALUEUNIT
VRDC Reverse Voltage1200V
IF(avg)DC Forward Current20A
IFRMRepetitive Peak Forward Current50A
IFSMNon-Repetative Forward Surge Current250A
PDPower Dissipation 40W
TJ(max)Maximum Junction Temperature 175°C
T, TSTGOperating and Storage Temperature-55 to +200°C

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