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Solitron Devices announces High Temp 1200V Silicon Carbide Schottky Diode

High Temp 1200V Silicon Carbide Schottky Diode

West Palm Beach, FL – April 30, 2021.  Solitron Devices is pleased to announce the SD11803 High Temp 1200V Silicon Carbide Schottky Diode.

The SD11803 is a 1200V, 10A silicon carbide (SiC) diode packaged in an industry standard 3-lead TO-258 hermetic package targeted for military and high reliability programs. Ideal for extreme environment applications the SD11803 has an operating temperature range up to -55°C to 200°C. Featuring extremely low switching losses due to nearly zero reverse recovery and low forward voltage drop the SD11803 is ideal for aerospace and military systems where size, weight and the highest possible efficiency are critical.    The high thermal conductivity allows very little variation in switching and thermal characteristics making the technology ideal for harsh and high temperature systems.

The SD11803 is available with COTS, TX, TXV and space level screening.

Samples are available from stock.

Download the datasheet


ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

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Solitron Devices announces Dual 650V Silicon Carbide Diode

Dual 650V Silicon Carbide Diode

West Palm Beach, FL – November 1 ,2017. Solitron Devices is pleased to announce the SDD50065SHD Dual 650V Silicon Carbide Diode. The SDD50065SHD features two 650V , 50A Silicon Carbide (SiC) diodes in series packaged in an industry standard 2-lead TO-247, isolated package. The device is the first SiC diode offering backside isolation easing board installation and reducing component count. Continue reading Solitron Devices announces Dual 650V Silicon Carbide Diode

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Solitron Devices announces new 1200V IGBT

1200v igbt

West Palm Beach, FL – May 31,2017. Solitron Devices announces the SD11428, a 1200V IGBT with integrated Silicon Carbide Schottky barrier diode.

Packaged in a low profile, <0.300 high, TO-3 ‘Co-Pack’; this robust IGBT/Schottky combination is ideal for high reliability, high density applications including AC motor drives, uninterruptible power supplies, switched-mode and resonant-mode power supplies, inductive heating, pumps and fans. Continue reading Solitron Devices announces new 1200V IGBT