Silicon Carbide Products

silicon carbide

650V to 1200V Ratings

200°C Operation

High speed switching with low Capacitance

High blocking voltage with low RDS(on)

Hermetic Packages

Compound semiconductors such as silicon carbide (SiC) are quickly emerging as the ideal successors to silicon in order to meet the need for higher efficiencies and power handling capability demanded in today’s power applications. Representing the next generation of high bandgap semiconductor technology these power devices far exceed the performance of their silicon counterparts with higher breakdown voltage, faster switching speeds and lower resistivity. Higher switching frequencies allow reduction in the size of components like inductors, capacitors, filters & transformers. Operating at temperatures in excess of 200°C make Solitron’s SiC solutions ideal for space constrained harsh environment applications.


Solitron’s SiC MOSFETs are packaged to survive the most extreme environments. They feature very low RDS(on) even at high temperatures and excellent switching performance versus the best-in-class silicon technologies, with minimal variation versus temperature. Hermetic TO-258 packages with 200°C operation make these 650V and 1200V MOSFETs ideal for power supplies, motor controls and applications requiring the smallest size, lightest weight and highest efficiency levels. Customized configurations and packaging is available upon request.


Type NumberVoltageDrain CurrentRds (On)PackageIsolated CaseTemp. RangeDatasheet
SMF0011200V55A40mΩTO-258 hermeticYes-55°C to 125°CComing soon
SMF0021200V72A30mΩTO-258 hermeticYes-55°C to 125°CComing soon
SMF0031200V95A95mΩTO-258 hermeticYes-55°C to 125°CComing soon

Schottky Barrier Diodes

Solitron’s SiC Schottky barrier diodes range from 650V to1200V and include singles, duals and bridge configurations. Available in a wide variety of packages including hermetic they offer designers high efficiency and the ultimate in robust technology. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance. Customized configurations and packaging is available upon request.
Type Number
Temp. Range
SD11800120010ASingleTO-247 2LYes-40°C to 175°C
SD11801120010ASingleTO-247 2LNo-40°C to 175°C
SDD10120AD120010A/20ADualTO-247 3LNo-40°C to 175°C
SDD50065SHD130050ADualTO-247-2LYes-40°C to 175°C
SDA001120010ASingleTO-258 hermeticYes-55°C to 175°CComing soon
SDA002120010A/20ADualTO-258 hermeticYes-55°C to 175°CComing soon
SDA003130050ADualTO-258 hermeticYes-55°C to 175°CComing soon


Combining functions such as MOSFETs, IGBTs, and Schottky diodes offers the ultimate is space savings, efficiency and reliability. Reduced component counts and interconnects, improved thermal performance and reduced inductive coupling are a few of the advantages of Co-Pak technology. Customized configurations and packaging is available upon request.
Device Type
Type Number
Temp. Range
IGBTSD11428120035ATO-3 (<0.300" Height) / TO-258-55°C to 125°C