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Solitron Devices announces 1200V Silicon Carbide Diode

Silicon Carbide Schottky Diode

West Palm Beach, FL – April 2 ,2019. Solitron Devices is pleased to announce the SDD10120 1200V Silicon Carbide Schottky Diode. The SDD10120 features two 1200V, 10A silicon carbide (SiC) diodes packaged in an industry standard 3-lead TO-247.

Featuring extremely low switching losses due to nearly zero reverse recovery and low forward voltage drop the SDD10120 is ideal for aerospace and military systems where size, weight and the highest possible efficiency are critical. The high thermal conductivity allows very little variation in switching and thermal characteristics making the technology ideal for harsh and high temperature applications.

The SDD10120 is available with standard COTS screening but can also be made available with MIL-PRF-19500 screening travellers and/or hermetically sealed packages with high reliability processing.

Samples are available from stock.


ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs. Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

Editorial Contact: Jack Worthen – 561-848-4311