Product News

West Palm Beach, FL – August 8, 2024.

Solitron Devices is pleased to highlight the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET.

Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227 the SD11740 offers ultra-low RDS(on) of 8.6mΩ.

The addition of the SOT-227 style package enables higher power applications for Solitron’s SiC based products in EV, power controllers, motor drive, induction heating, solid state circuit breakers and high voltage power supplies. The SD11740 offers 120A of continuous drain current. The SOT-227 features 3kV isolation to a copper heat sink base for outstanding low thermal impedance. The device provides a real Kelvin gate connection for optimal gate control. Either emitter terminal can be used as main or Kelvin emitter.

Designed for use as a power semiconductor switch the SD11740 outperforms silicon based MOSFETs and IGBTs. The standard gate drive characteristics allow for a true drop-in replacement to silicon IGBTS and MOSFETs with far superior performance. Ultra-low gate charge and exceptional reverse recovery characteristics, make them ideal for switching inductive loads and any application requiring standard gate drive.

Samples are available from stock.

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight; higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs. Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – December 5, 2023.

Solitron Devices is pleased to announce the introduction of the SD11487, the industry’s first hermetically sealed Silicon Carbide (SiC) Power Module for high reliability applications.

With a unique hermetic packaging format, the 51mm x 30mm x 8mm outline is the smallest hermetically sealed high reliability, high voltage, half-bridge on the market. The integrated format maximizes power density while minimizing loop inductance. 60 mil pins for the power output stage are isolated on one side of the package to allow simple power bussing while 30 mil pins are on the opposite side for control signals.

The SD11487 is a half bridge configuration with two 1200V 12mΩ SiC MOSFETs.  Also included in the module are two freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs and an integrated NTC temperature sensor. Continuous drain current is specified at 95A.

With operating temperatures of -55°C to 175°C, the SD11487 is designed for the most demanding applications such as down hole exploration; space; and avionics. The hermetically sealed copper package combined with the Alumina Nitride direct bond copper substrate provide excellent thermal conductivity as well as case isolation. The integrated temperature sensing enables high level temperature protection.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.

ABOUT SOLITRON DEVICES | MICRO ENGINEERING

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Solitron’s recent acquisition of Micro Engineering further expands capabilities from custom design assemblies and prototyping to full turn key printed circuit board assemblies.  Customers in medical, aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight; higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – August 1, 2023.

Solitron Devices is pleased to announce a substantial expansion of our Junction Field-Effect Transistor (JFET) portfolio of products.  Expanding on the existing JANTXV qualified product line, Solitron has added 16 new N channel devices offered with COTS and hi reliability screening options.

Packaged in hermetic TO18/TO-72/TO-78 packages, this series is designed for harsh environments such as space, avionics, and high reliability systems. The bipolar processing technology provides inherent high radiation tolerance, idea for space flight applications. Screening to “S” level standards is available.

The 2N3957/58 and 2N5911/12 are dual matched JFETS while the 2N4091/92/93 offer very low noise at 1.2 nV/√Hz typical.

The 2N4117/18/19 are a series of low leakage (1pA typ.), ultra-high input impedance parts designed for input buffers and pre amplifiers.

The 2N4338/39 are low noise, high gain parts ideal for audio applications and the 2N4391/92/93 are fast switching, low cut off voltage (<3.0V) targeted for analog switch, chopper amplifier and commutator designs.

Solitron can also provide special product requirements for tailored electrical performance as well as customized packaging including multi-chip modules and high density SMT boards.  With a 50-year track record with JFET manufacturing, Solitron now provides the widest offering of high reliability circuits in the industry.

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight; higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs. Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – June 21, 2023.

Solitron Devices is pleased to announce the introduction of the SD11710 the latest in our series of hi-rel MOSFETs and the industry’s first military grade 700V silicon carbide (SiC) device. 

Packaged in an extremely rugged hermetically sealed TO-258, the SD11710 is built for the most demanding industrial, aerospace and defense applications.  The SD11710 provides R_DS(on) of 16mΩ and 50A  of continuous drain current.  200°C operation is also available upon request.

Key Features include

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.

Rugged packaging combined with high temperature operation make the SD11710 ideal for the most demanding power supply and motor control applications requiring small size, light weight and high efficiency.

The SD11710 is available with COTS, TX, TXV and space level screening. Samples are available from stock.

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight; higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs. Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – May 16, 2023.

Solitron Devices is pleased to announce the introduction of the SD11911 and SD11912 1200V Silicon Carbide (SiC) Power Modules.  Both modules feature two independent, high current MOSFETs. 

Solitron power modules maximize the benefits of SiC, with a unique robust and cost-effective packaging format. The 37mm x 25mm x 9mm outline is a fraction of the size and weight of competitive modules. The integrated format maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.

The SD11911 and SD11912 provide two independent MOSFET configurations.  The SD11911 includes two 1200V, Ultra low R_DS(on) 8.6mΩ SiC MOSFETs while the SD11912 has two 13mΩ MOSFETs.  The pinout configuration separates the power bus from the gate and source controls to ease and simplify board layout.  The independent outputs allow maximum flexibility to customize configurations such as half bridge, full bridge, H-bridge and many other topologies. Both devices feature continuous drain current of 120A.  Both modules include an integrated NTC temperature sensor.

The SD11911 and SD11912 are designed for demanding applications such as avionics based electromechanical actuators, industrial high efficiency power converters/inverters and motor drives. With operating temperatures of -55°C to 175°C, construction includes copper baseplates and Alumina Nitride insulators ensuring TCE matching and high thermal transfer. Isolated integrated temperature sensing enables high level temperature protection. Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon are achieved due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight; higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs. Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – March 29, 2022. Solitron Devices is pleased to announce the introduction of the SD11720, 1200V Silicon Carbide (SiC), low R_DS(on)  MOSFET.

Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications.  Packaged in a TO-247 the SD11720 is ideally suited for EV, Renewable Energy, Motor Drive, Induction Heating and High Voltage power supply applications.

The SD11702 offers 58A of continuous drain current with low R_DS(on)  of 50mΩ. Designed for use as a power semiconductor switch the SD11720 outperforms silicon MOSFETs blocking voltage, on resistance, and junction capacitances.

The SD11720 offers ultra-fast switching and low losses allowing systems to provide high power density, reduced size, weight and improved efficiency. Silicon Carbide also provides minimal variation versus temperature with an operating temperature of -40°C to 175°C.

Samples are available from stock.

See other available SiC MOSFETs

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.

Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – December 6, 2021. Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge Power Modules.

Solitron has developed this power module series to maximize the benefits of SiC, with a unique robust, simple, and cost-effective module format. The 37mm x 25mm x 9mm outline is a fraction of the size and weight of competitive modules. The integrated format maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.

The SD11906/07/56/57 are half bridge configurations with two 1200V, Low R_DS(on) 13mΩ SiC MOSFETs. The SD11906 and SD11956 feature freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs inside the module. The pinout configuration separates the power bus from the gate and source controls to ease and simplify board layout. All four devices feature continuous drain current of 105A.

This series is designed for demanding applications such as avionics based electromechanical actuators and power converters. With operating temperatures of -55°C to 175°C, construction includes copper baseplates and Alumina Nitride insulators ensuring TCE matching and high thermal transfer. Isolated, integrated temperature sensing enables high level temperature protection on the SD11906 and SD11907.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size. Additions to the series which include enhanced performance, alternative pin outs and higher levels of integration are targeted for release later this year.

Samples are available from stock, evaluation boards are also available.

See other available SiC Power Modules

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.

Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance. Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – November 8, 2021. Solitron Devices is pleased to announce the introduction of the SD11702, 650V Silicon Carbide (SiC), ultra-low R_DS(on) MOSFET.

Packaged in a hermetically sealed TO-258, the SD11702 is built for the most demanding industrial, aerospace and defence applications.  With operating temperatures of -55°C to 175°C the SD11702 offers 50A of continuous drain current.   With an ultra-low R_DS(on)  of 6.7mΩ the SD11702 provides standard gate drive characteristics allowing for replacement of standard silicon and IGBT topologies. 200°C operation is also available upon request.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. The SD11702 provides ultra-low gate charge and exceptional reverse recovery characteristics making it ideal for switching inductive loads and systems that require standard gate drive.

Hermetic packaging combined with high temperature operation make the SD11702 ideal for the most rugged power supply and motor control applications requiring small size, light weight and high efficiency.

The SD11702 is available with COTS, TX, TXV and space level screening. Samples are available from stock.

See other available SiC MOSFETs

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – October 4, 2021. Solitron Devices announces 1200V Silicon Carbide Half Bridge Power Module.

Solitron has developed the SD11900 series, a 1200V, 50A power module platform to maximize the benefits of SiC, with a unique robust, simple, and cost-effective module format. The 37mm x 25mm outline is a fraction of the size and weight of standard 62mm modules.  The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.

The SD11902/3/4/5 are half bridge configurations with two 1200V 32mΩ SiC MOSFETs.  The SD11902 and SD11904 feature freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs inside the module. Two pinout configurations provide flexible power bussing options.  Continuous drain current is specified at 50A.

The SD11900 series is designed for demanding applications such as avionics based electromechanical actuators and power converters. With operating temperatures of -55°C to 175°C, construction includes copper baseplates and Alumina Nitride insulators ensuring TCE matching and high thermal transfer. Isolated integrated temperature sensing enables high level temperature protection.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.

Additions to the series which include enhanced performance, alternative pin outs and higher levels of integration are targeted for release later this year. 

Samples are available from stock.

See the full lineup of available modules

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.

West Palm Beach, FL – May 31, 2021.  Solitron Devices is pleased to announce the introduction of two new 1200V Silicon carbide (SiC) MOSFET devices. 

Packaged in hermetically sealed TO-258s, the SD11705 and SD11707 are built for the most demanding industrial, aerospace and defence applications. With operating temperatures of -55°C to 175°C both parts offer 50A of continuous drain current. The SD11705 provides R_DS(on)  of 32mΩ while the SD11707 has R_DS(on) of 16mΩ. 200°C operation is also available upon request.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.
Hermetic packages combined with high temperature operation make the SD11705 and SD11707 ideal for the most rugged power supply and motor control applications requiring small size, light weight and high efficiency.

The SD11705 and SD11707 are available with COTS, TX, TXV and space level screening.

Samples are available from stock.

See the full lineup of SiC MOSFETs

ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.