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Solitron Devices announces High Temp 1200V Silicon Carbide Schottky Diode

High Temp 1200V Silicon Carbide Schottky Diode

West Palm Beach, FL – April 30, 2021.  Solitron Devices is pleased to announce the SD11803 High Temp 1200V Silicon Carbide Schottky Diode.

The SD11803 is a 1200V, 10A silicon carbide (SiC) diode packaged in an industry standard 3-lead TO-258 hermetic package targeted for military and high reliability programs. Ideal for extreme environment applications the SD11803 has an operating temperature range up to -55°C to 200°C. Featuring extremely low switching losses due to nearly zero reverse recovery and low forward voltage drop the SD11803 is ideal for aerospace and military systems where size, weight and the highest possible efficiency are critical.    The high thermal conductivity allows very little variation in switching and thermal characteristics making the technology ideal for harsh and high temperature systems.

The SD11803 is available with COTS, TX, TXV and space level screening.

Samples are available from stock.

Download the datasheet


ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.