SDD10120AD – 1200V Silicon Carbide Dual Schottky Diode

KEY FEATURES

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_R	D.C. Reverse Voltage	1200	V
V_RRM	Repetitive Peak Voltage	1200	V
V_RSM	Surge Peak Reverse Voltage	1200	V
V_DC	DC Blocking Voltage	1200	V
I_F(avg)	DC Forward Current	10/20	A
I_FRM	Repetitive Peak Forward Current	44/88	A
I_FSM	Non-Repetative Forward Surge Current	43/89	A
P_D	Power Dissipation	16	W
T_C(max)	Maximum Case Temperature	175	°C
T_J(max)	Maximum Junction Temperature	200	°C
T, T_STG	Operating and Storage Temperature	-55 to +175	°C