SD11956 – 1200V SiC Half-Bridge Power Module
$50.00
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KEY FEATURES
- Superior system efficiency due to low switching and conductions losses of SiC
- Outstanding power conversion efficiency at high frequency operation
- High speed switching w/ low capacitance
- Reduced parasitic inductance and capacitance
- Real kelvin source connection for stable gate drive
- Isolated backside for direct mount to heatsink
- AlN substrate and CuMo baseplate for thermal conductivity
- High junction temperature operation
- Low junction to case thermal resistance
- Reduced thermal requirements and system cost
- Integrated NTC temperature sensor
- Rugged mounting due to integrated mounting bushes
- Low-profile compact package
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Maximum Ratings, TC = 25°C
| SYMBOL | CHARACTERISTIC | VALUE | UNIT |
| VDS, max | Drain-Source Voltage | 1200 | V |
| ID | Continuous Drain Current | 105 | A |
| ID,pulse | Pulsed Drain Current | 420 | A |
| VGS | Gate-Source Voltage | -4 to 15 | V |
| TJ, TSTG | Junction Temperature, Operating and Storage | -55 to +175 | °C |
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