SD11811 – 1200V Silicon Carbide Dual Schottky Diode
$50.00
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KEY FEATURES
|
Maximum Ratings, TC = 25°C
| SYMBOL | CHARACTERISTIC | VALUE | UNIT |
|---|---|---|---|
| VR | DC Reverse Voltage | 1200 | V |
| IF(avg) | DC Forward Current | 20 | A |
| IFRM | Repetitive Peak Forward Current | 50 | A |
| IFSM | Non-Repetative Forward Surge Current | 250 | A |
| PD | Power Dissipation | 40 | W |
| TJ(max) | Maximum Junction Temperature | 175 | °C |
| T, TSTG | Operating and Storage Temperature | -55 to +200 | °C |


