SD11806 – Dual 1200V Silicon Carbide Schottky Diode
KEY FEATURES
|
Maximum Ratings, TC = 25°C
SYMBOL | CHARACTERISTIC | VALUE | UNIT |
---|---|---|---|
VR | DC Reverse Voltage | 1200 | V |
VRRM | Repetitive Peak Voltage | 1200 | V |
VRSM | Surge Peak Reverse Voltage | 1200 | V |
VDC | DC Blocking Voltage | 1200 | V |
IF(avg) | DC Forward Current | 20/40 | A |
IFRM | Repetitive Peak Forward Current | 77/154 | A |
IFSM | Non-Repetative Forward Surge Current | 82/164 | A |
PD | Power Dissipation | 104 | W |
TJ(max) | Maximum Junction Temperature | 175 | °C |
T, TSTG | Operating and Storage Temperature | -55 to +175 | °C |