SD11806 – Dual 1200V Silicon Carbide Schottky Diode

 

KEY FEATURES

  • VRRM 1200V
  • IF @ 125°C 20/40A
  • Isolated Backside
  • TO-258 Hermetic Package
  • MIL-PRF-19500 Screening Available

Maximum Ratings, TC = 25°C

SYMBOLCHARACTERISTICVALUEUNIT
VRDC Reverse Voltage1200V
VRRMRepetitive Peak Voltage1200V
VRSMSurge Peak Reverse Voltage1200V
VDCDC Blocking Voltage1200V
IF(avg)DC Forward Current20/40A
IFRMRepetitive Peak Forward Current77/154A
IFSMNon-Repetative Forward Surge Current82/164A
PDPower Dissipation 104W
TJ(max)Maximum Junction Temperature 175°C
T, TSTGOperating and Storage Temperature-55 to +175°C

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