SD11704 – 900V SiC N-Channel Power MOSFET

KEY FEATURES

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_{DS, max}	Drain-Source Voltage	900	V
V_{GS, max}	Gate-Source Voltage (dynamic)	-10 / +25	V
I_D	Continuous Drain Current	32	A
I_D,pulse	Pulsed Drain Current	128	A
P_D	Maximum Power Dissipation	278	W
T_J, T_STG	Junction Temperature, Operating and Storage	-55 to +150	°C