SD11702 – 650V SiC N-Channel Power MOSFET

KEY FEATURES

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_{DS, max}	Drain-Source Voltage	650	V
V_{GS, max}	Gate-Source Voltage (dynamic)	-20 / +20	V
I_D	Continuous Drain Current	50	A
I_D,pulse	Pulsed Drain Current	200	A
P_D	Maximum Power Dissipation	220	W
T_J, T_STG	Junction Temperature, Operating and Storage	-55 to +175	°C