SD11810 – 650V Silicon Carbide Schottky Diode

 

KEY FEATURES

  • No Reverse Recovery / No Forward Recovery
  • Near  Zero Switch Loss
  • Switching Behavior Independent of Temperature
  • 175°C Operating Temperature
  • Isolated Case
  • Hermetic Package
  • TX, TXV and Space Level Screening Available

Maximum Ratings, TC = 25°C

SYMBOLCHARACTERISTICVALUEUNIT
VRDC Reverse Voltage650V
VRRMRepetitive Peak Voltage650V
VRSMSurge Peak Reverse Voltage650V
VDCDC Blocking Voltage650V
IF(avg)DC Forward Current88A
IFRMRepetitive Peak Forward Current128A
IFSMNon-Repetative Forward Surge Current260A
PDPower Dissipation 283W
TJ(max)Maximum Junction Temperature 175°C
T, TSTGOperating and Storage Temperature-55 to +175°C

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