SD11810 – 650V Silicon Carbide Schottky Diode
KEY FEATURES
|
Maximum Ratings, TC = 25°C
SYMBOL | CHARACTERISTIC | VALUE | UNIT |
---|---|---|---|
VR | DC Reverse Voltage | 650 | V |
VRRM | Repetitive Peak Voltage | 650 | V |
VRSM | Surge Peak Reverse Voltage | 650 | V |
VDC | DC Blocking Voltage | 650 | V |
IF(avg) | DC Forward Current | 88 | A |
IFRM | Repetitive Peak Forward Current | 128 | A |
IFSM | Non-Repetative Forward Surge Current | 260 | A |
PD | Power Dissipation | 283 | W |
TJ(max) | Maximum Junction Temperature | 175 | °C |
T, TSTG | Operating and Storage Temperature | -55 to +175 | °C |