SD11705 – 1200V SiC N-Channel Power MOSFET
KEY FEATURES
|
Maximum Ratings, TC = 25°C
SYMBOL | CHARACTERISTIC | VALUE | UNIT |
---|---|---|---|
VDS, max | Drain-Source Voltage | 1200 | V |
VGS, max | Gate-Source Voltage (dynamic) | -8 / +19 | V |
ID | Continuous Drain Current | 50 | A |
ID,pulse | Pulsed Drain Current | 160 | A |
PD | Maximum Power Dissipation | 276 | W |
TJ, TSTG | Junction Temperature, Operating and Storage | -55 to +175 | °C |