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KEY FEATURES
- Superior system efficiency due to low switching and conductions losses of SiC
- Outstanding power conversion efficiency at high frequency operation
- High speed switching w/ low capacitance
- Reduced parasitic inductance and capacitance
- Real kelvin source connection for stable gate drive
- AlN substrate and CuMo baseplate for thermal conductivity
- High junction temperature operation
- Low junction to case thermal resistance
- Reduced thermal requirements and system cost
- Integrated NTC temperature sensor
- Rugged mounting due to integrated mounting bushes
- Low-profile compact package
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