SD11720 – 1200V SiC N-Channel Power MOSFET
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KEY FEATURES
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Maximum Ratings, TC = 25°C
| SYMBOL | CHARACTERISTIC | VALUE | UNIT |
|---|---|---|---|
| VDS, max | Drain-Source Voltage | 1200 | V |
| VGS, max | Gate-Source Voltage | -5 / +20 | V |
| ID | Continuous Drain Current | 58 | A |
| ID,pulse | Pulsed Drain Current | 15 | A |
| PD | Maximum Power Dissipation | 327 | W |
| TJ, TSTG | Junction Temperature, Operating and Storage | -55 to +175 | °C |
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