SD11705 – 1200V SiC N-Channel Power MOSFET

KEY FEATURES

SYMBOL	CHARACTERISTIC	VALUE	UNIT
V_{DS, max}	Drain-Source Voltage	1200	V
V_{GS, max}	Gate-Source Voltage (dynamic)	-8 / +19	V
I_D	Continuous Drain Current	50	A
I_D,pulse	Pulsed Drain Current	160	A
P_D	Maximum Power Dissipation	276	W
T_J, T_STG	Junction Temperature, Operating and Storage	-55 to +175	°C