SD11803 – 1200V 10A Silicon Carbide Schottky Diode
KEY FEATURES
|
Maximum Ratings, TC = 25°C
SYMBOL | CHARACTERISTIC | VALUE | UNIT |
---|---|---|---|
VR | DC Reverse Voltage | 1200 | V |
VRRM | Repetitive Peak Voltage | 1200 | V |
VRSM | Surge Peak Reverse Voltage | 1200 | V |
VDC | DC Blocking Voltage | 1200 | V |
IF(avg) | DC Forward Current | 10 | A |
IFRM | Repetitive Peak Forward Current | 44 | A |
IFSM | Non-Repetative Forward Surge Current | 43 | A |
PD | Power Dissipation | 66 | W |
TC(max) | Maximum Case Temperature | 175 | °C |
TJ(max) | Maximum Junction Temperature | 225 | °C |
T, TSTG | Operating and Storage Temperature | -55 to +210 | °C |