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Solitron Devices announces High-Rel 1200V Silicon Carbide MOSFETs

High-Rel 1200V Silicon Carbide MOSFETs

West Palm Beach, FL – May 31, 2021.  Solitron Devices is pleased to announce the introduction of two new 1200V Silicon carbide (SiC) MOSFET devices. 

Packaged in hermetically sealed TO-258s, the SD11705 and SD11707 are built for the most demanding industrial, aerospace and defence applications. With operating temperatures of -55°C to 175°C both parts offer 50A of continuous drain current. The SD11705 provides RDS(on)  of 32mΩ while the SD11707 has RDS(on) of 16mΩ. 200°C operation is also available upon request.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.
Hermetic packages combined with high temperature operation make the SD11705 and SD11707 ideal for the most rugged power supply and motor control applications requiring small size, light weight and high efficiency.

The SD11705 and SD11707 are available with COTS, TX, TXV and space level screening.

Samples are available from stock.

SD11705 Datasheet
SD11707 Datasheet

See the full lineup of SiC MOSFETs


ABOUT SOLITRON DEVICES

Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability.  Customers in aerospace, defense, industrial and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems level power solutions.

Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs.  Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide and GaN with advanced packaging materials to achieve cutting edge power density and performance.  Capabilities include both standard and custom solutions delivered with industry leading quality, service and support.